Dynamics of Flow of C-Axis Sapphire

作者: D. M. Kotchick , B. J. Busovne , R. E. Tressler , D. J. Barber

DOI: 10.1007/BF00540414

关键词: Materials scienceSapphireCrystallographySolid mechanicsCondensed matter physicsUniaxial tensionFlow stressSlip (materials science)

摘要: The deformation dynamics in uniaxial tension of c-axis sapphire were investigated at temperatures from 1600 to 1850° C constant strain-rate tests 0.00007 min−1 0.0036 min−1. activation parameters are consistent with thermally-activated overcoming the Peierls barrier as rate-controlling process for flow. From SEM, TEM, and HVTEM examinations deformed specimens it is deduced that active slip plane {¯4223}-type. dislocation structure suggests 〈0 ¯110〉 directions most likely directions.

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