Interfacial stages of the ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport deposition at low temperature
作者： T. W. Kim , H. L. Park , J. Y. Lee
DOI: 10.1063/1.111562
关键词: Optoelectronics 、 Transmission electron microscopy 、 Epitaxy 、 Substrate (electronics) 、 Layer (electronics) 、 Heterojunction 、 Auger effect 、 Materials science 、 Auger electron spectroscopy 、 Crystallography 、 Chemical vapor deposition
摘要: A lattice‐mismatched ZnTe epilayer on a GaAs (100) substrate was grown by the simple method of temperature‐gradient vapor deposition. From x‐ray diffraction analysis, layers were found to be epitaxial films. The stoichiometry films investigated Auger electron spectroscopy. Transmission microscopy measurements showed that there large lattice mismatch between layer and substrate. These results indicate substrates at 320 °C have no significant interdiffusion problems, pseudomorphic, fully strained are observed for deposits after ten molecular layers.
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