Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/p-Si heterojunction
作者： R. Ghosh , D. Basak
DOI: 10.1063/1.2748333
关键词: Silicon 、 Materials science 、 Rectification 、 Optoelectronics 、 Heterojunction 、 Semiconductor 、 Ultraviolet 、 Scanning tunneling microscope 、 Zno nanowires 、 Nanowire 、 Analytical chemistry
摘要: The authors report on the electrical and ultraviolet (UV) photoresponse properties of quasialigned ZnO nanowires (NWs)∕p-Si heterojunction grown by a low-temperature solvothermal technique. current-voltage characteristic single NW∕p-Si junction measured scanning tunneling microscope shows rectifying behavior with rectification ratio IF∕IR 33 at 5V. current transport is dominated recombination-tunneling mechanism for 0.4V
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