Multiple charge states of substitutional oxygen in gallium arsenide.
作者： R. Jones , S. Öberg
DOI: 10.1103/PHYSREVLETT.69.136
关键词: Charge (physics) 、 Atomic physics 、 Semiconductor materials 、 Oxygen 、 Electronic structure 、 Gallium arsenide 、 Inorganic compound 、 Molecular vibration 、 Cluster (physics) 、 Materials science
摘要: A local-density-functional cluster method is used to calculate the structure and vibrational modes of substitutional oxygen, O As , in gallium arsenide. We find defect can exist a surprisingly large number five charge states: n- with n=-1, 0, 1, 2, 3. The structures first two these are very different from last three. Their calculated fair agreement observations on 0 GaP GaAs. pair deffects have midgap level, third has an empty upper-gap level which become occupied photoillumination experiments
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