作者: Poulami Ghosh , Ashwini Kumar Sharma
DOI: 10.1007/S00339-014-8347-X
关键词: Analytical chemistry 、 Substrate (chemistry) 、 Nanostructure 、 Photoluminescence 、 Nanotechnology 、 Zinc 、 Crystallinity 、 Pulsed laser deposition 、 Catalysis 、 Raman spectroscopy 、 Materials science
摘要: We report on the growth of highly c-axis-oriented ZnO nanostructures by pulsed laser deposition technique without using any catalyst. The full-width-at-half-maximum (002) peak decreased with an increase in substrate temperature. However, a dip at 150 °C is attributed to contribution from both small- and large-size particles. FE-SEM images show that temperature results formation larger Photoluminescence emission observed near band edge as well defect-related states for all nanostructures. presence E 2(low) 2(high) Raman mode intensity respective indicates better crystallinity. Both PL spectra indicate A 1(LO) may arise due defect related interstitial zinc.