Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

摘要: Abstract We describe models for physical properties of the technologically significant GaInAs material system with respect to its composition and strain conditions introduced by strained-layer heteroepitaxy. give an empirical relation critical thickness which takes growth into account allows residual layer thicknesses exceeding one be estimated. Easy use band edge energy effective mass are presented, based on deformation potential k·p theory. Monte Carlo calculations were employed obtain a model anisotropic electron mobility. All given as functions independent parameters no longer strictly coupled in relaxed case.