Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO
作者： Sang-Ho Kim , Han-Ki Kim , Tae-Yeon Seong
DOI: 10.1063/1.1862772
关键词: Hydrogen 、 Photoluminescence 、 Hydrogen peroxide 、 Schottky diode 、 Materials science 、 Analytical chemistry 、 Schottky barrier 、 Voltage 、 Optoelectronics 、 Wide-bandgap semiconductor 、 Platinum 、 Physics and Astronomy (miscellaneous)
摘要: We report on the formation of good Pt Schottky contacts Zn-terminated n-type ZnO (0001) surfaces (∼2×1017cm−3) using surface treatment with a hydrogen peroxide solution. The organic solvent-cleaned show leaky behavior high leakage current ∼−0.05A under −5V reverse bias voltage, whereas peroxide-treated very low ∼−6.5×10−8A voltage. barrier heights estimated from current-voltage and capacitance-voltage characteristics are 0.89 0.93eV, respectively. Room-temperature photoluminescence results that is fairly effective in removing deep-level defects near region. In addition, preliminary transient spectroscopy result also presented.
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