Ferroelectric mechanical memory and method

摘要: A memory device comprising a base; capacitor ferroelectric layer and at least two electrically conductive layers, the being located between layers; each of layers operatively connected to current source; cantilever attached base first end movable second end, mounted such that moves predetermined displacement upon application which induces deformation thereby causing is associated with contact so an electrical connection enabled cantilever. The presence or absence forms states cell.