Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques

摘要: Abstract A model describing the incorporation of dopants into single crystals films grown by molecular beam epitaxy (MBE) is presented. The accounts for dopant surface segregation during deposition and allows probabilities depth profiles to be calculated as a function film growth conditions (e.g. rate, flux, temperature, Ts). Input data include thermodynamic parameters such free energy dopant-surface binding energies together with kinetic incident fluxes diffusivities. applied here case thermal doping MBE impurities exhibiting strong near-unity probabilities, σ, well those both temperature-dependent σ values. In addition, an extension used account accelerated-ion MBE. Calculated values σ(Ts) were found agree very available experimental results in these cases. Finally, epitaxial semiconductors deposited glow discharge environments which growing bombarded relatively large inert gas ions ionized species are presented discussed. this similar low flux ion but additional effects preferential sputtering collisional mixing.