作者: Chan-Long Shieh , Song Q. Shi , Hsing-Chung Lee
DOI:
关键词: Layer (electronics) 、 Thin-film transistor 、 Organic semiconductor 、 Materials science 、 Organic field-effect transistor 、 Optoelectronics 、 Electron mobility 、 Gate insulator 、 Molecule
摘要: An organic thin film transistor including a gate (21, 31, 41, 51, 61, 71) on layer of insulator material (22, 32, 42, 52, 62, 72), source (25, 35, 45, 55, 65, 75) and drain (26, 36, 46, 56, 66, 76) positioned in spaced apart relationship (24, 34, 44, 54, 64, 74) semiconductor with uniaxially aligned molecules, the being so that molecules are between direction from to 76), an orientation (23, 43, 63, 73) adjacent molecular uniaxial alignment is achieved by 73).