Developments in semiconductor detector technology and new applications — symposium summary
作者： Tuneyoshi Kamae
DOI: 10.1016/S0168-9002(99)00637-3
关键词: Semiconductor detector 、 Silicon 、 Photodiode 、 Particle detector 、 Scintillator 、 Electronics 、 Detector 、 Physics 、 Semiconductor device 、 Optoelectronics
摘要: Abstract Most traditional silicon-based detectors have advanced close to their intrinsic limits and optimization of the front-end electronics has become most crucial in improving performance for specific applications. CdZnTe CdTe, promising hard X-ray band, are now finding real commercial Si drift-type among few whose merits not been fully exploited. When they used as photodiodes combined with new high- Z , high light-yield scintillators (eg. GSO), we can expect a break-through MeV gamma-ray detection.
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