Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films
作者： Panagiotis Poulopoulos , Björn Lewitz , Andreas Straub , Spiridon D. Pappas , Sotirios A. Droulias
DOI: 10.1063/1.4720167
关键词: Band gap 、 Quantum dot 、 Magnetic semiconductor 、 Exciton 、 Thin film 、 Effective mass (solid-state physics) 、 Condensed matter physics 、 Materials science 、 Semiconductor 、 Spintronics
摘要: Ultraviolet-visible absorption spectra of nanoscaled EuS thin films reveal a blue shift the energy between top-valence and bottom-conduction bands. This band-gap tuning changes smoothly with decreasing film thickness becomes significant below exciton Bohr diameter ∼3.5 nm indicating strong quantum confinement effects. The results are reproduced in framework potential morphing method Hartree Fock approximation. large values effective mass holes, due to localization f-states, limit about 0.35 eV. controllable magnetic semiconductor renders it useful for merging spintronics optoelectronics.
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