Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing
作者： Yasufumi Takagi , Hiroo Yonezu , Yoshiaki Hachiya , Kangsa Pak
DOI: 10.1143/JJAP.33.3368
关键词: Ion 、 Transmission electron microscopy 、 Climb 、 Annealing (metallurgy) 、 Materials science 、 Condensed matter physics 、 Si substrate 、 SPECIFIC DISLOCATIONS 、 Semiconductor materials 、 Crystallography 、 Dislocation
摘要: The effects of high-temperature annealing were investigated by transmission electron microscopy (TEM) and secondary ions mass spectroscopy (SIMS) on reduction threading dislocation density in GaAs epilayers grown Si substrates. It was found that the annealed remarkably reduced. This phenomenon could be attributed to an increase velocity glide motion including climb caused reaction with vacancies at high temperature. In addition, specific long dislocations running parallel GaAs–Si hetero-interface observed. distributed around diffusion front atoms epilayer. These results led a model for annealing.
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