Fundamental aspects of ultrathin dielectrics on si-based devices

摘要: Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, Analysis (Oxy)nitridation. 4. Initial Oxidation Surface Science Issues. 5. Electrical Properties Microscopic Models Defects. 6. Hydrogen/Deuterium 7. New Substrates (SiC, SiGe) SOI Technologies. Appendix. Authors Index. List Workshop Participants.