作者: Wolfgang Theiß
DOI: 10.1007/978-3-7091-6840-0_4
关键词: Molecular vibration 、 Infrared 、 Semiconductor 、 Optoelectronics 、 Silicon 、 Infrared spectroscopy 、 Reflection spectroscopy 、 Luminescence 、 Materials science 、 Porous silicon
摘要: Infrared reflection spectroscopy is presented as a tool for the investigation of porous silicon. The simulation approach used spectrum interpretation discussed. silicon aging behaviour, relation between silicon-hydrogen vibrational modes and luminescence well structuring required devices are