作者: Jörn P. Epping , Marcel Hoekman , Richard Mateman , Arne Leinse , René G. Heideman
DOI: 10.1364/OE.23.000642
关键词: Yield (engineering) 、 Optoelectronics 、 Layer (electronics) 、 Wavelength 、 Fabrication 、 Etching (microfabrication) 、 Silicon 、 Silicon nitride 、 Wafer 、 Materials science 、 Optics
摘要: In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with thickness of up to 900 nm, which are suitable nonlinear optical applications. The method is based on etching trenches in thermally oxidized and filling the Si3N4. Using no stress-induced cracks Si3N4 layer were observed resulting high yield devices wafer. propagation losses obtained measured be as low 0.4 dB/cm at wavelength around 1550 nm.