Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration
作者： Yoshitaka Okada , Hirofumi Shimomura , Mitsuo Kawabe
DOI: 10.1063/1.354029
关键词: Crystallography 、 Molecular beam epitaxy 、 Substrate (electronics) 、 Molecular physics 、 Epitaxy 、 Dislocation 、 Chemistry 、 Reflection high-energy electron diffraction 、 Hydrogen 、 Vicinal 、 Thin film
摘要: Basic experimental results obtained for the low‐temperature molecular beam epitaxy with atomic hydrogen have been presented. GaAs films grown at different substrate temperatures exhibited values of dislocation densities and average density as low 3×104 cm−2 has successfully a 330 °C irradiation. These are among lowest reported to date. The surface cleaning effects reconstruction vicinal Si(100) surfaces during irradiation, also electrical properties epitaxial investigated analyzed. Physics behind drastic reduction in detail based on cross‐sectional plan‐view transmission electron microscope observations analysis growth kinetics.
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