作者: K.E. Kuijk
DOI: 10.1109/JSSC.1973.1050378
关键词: Mesh analysis 、 Optoelectronics 、 Bandgap voltage reference 、 Input offset voltage 、 Voltage regulator 、 Voltage reference 、 Zener diode 、 Materials science 、 Voltage divider 、 Resistor 、 Electrical engineering
摘要: With increasing temperature the base-emitter voltage of a transistor with constant current decreases, while difference in voltages two identical (integrated) transistors having ratio increases. From sum nearly temperature- independent output is obtained if this equals gap silicon. A reference source 10 V based on principle described. The part circuit an integrated circuit, and thin-film resistors small relative coefficient are used. An operational amplifier few capacitors complete circuit. has parabolic characteristic peak can be controlled by resistor adjustment. change /spl plusmn/10 K respect causes -250 mu/V, plusmn/30 -2.2 mV. long-term stability ppm/month was measured. compete best available Zener diode sources, added advantage that practically no selection necessary.