Interband optical transitions of a strained InxGa1−xAs/GaAs quantum dot/wetting layer with various In mole fractions
作者： Roghaieh Parvizi
DOI: 10.1016/J.PHYSB.2014.08.029
关键词: Schrödinger equation 、 Mole fraction 、 Photoluminescence 、 Condensed matter physics 、 Materials science 、 X-ray absorption spectroscopy 、 Quantum dot 、 Wetting layer 、 Electronic structure 、 Spectral line
摘要: Abstract In this paper, a numerical approach for calculating interband optical transitions of an InxGa1−xAs/GaAs conical shaped quantum dot is presented with different mole fraction. The electronic structure was calculated by solving one-band effective-mass Schrodinger equation taking into account the strain effects. simulations are performed employing finite element method in cylindrical co-ordinates. wetting layer thickness and QD height effects on S P bands energies also investigated to be guidance optimal design optoelectronic devices. obtained results indicate red shift photoluminescence spectra increasing which good agreement experimental data.
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