Laser optogalvanic measurements and line-shape analysis of 5p57p and 5p54–5f autoionizing resonances in xenon
作者： M Hanif , M Aslam , M Riaz , S A Bhatti , M A Baig
DOI: 10.1088/0953-4075/38/2/005
关键词: Photoionization 、 Autoionization 、 Physics 、 Excited state 、 Quantum defect 、 Laser 、 Xenon 、 Atomic physics 、 Metastability 、 Resonance
摘要: We present new measurements of the even parity autoionizing resonances built on 5p57p and 5p54f configurations in xenon using laser optogalvanic detection technique conjunction with a dc discharge cell. The 5p57p[1/2]1 5p57p[3/2]1 excited from 5p56s[1/2]0 metastable level 5p57p[3/2]2 resonance 5p56s[1/2]1 have been studied. In addition, 5p5(2P1/2)nf (n = 4 5) collisionally populated levels 5p55d configuration investigated. J-value assignments are established light selection rules jK-coupling scheme. determined energies, quantum defects, line-shape parameters widths by fitting observed profiles Fano's formula for photoionization cross section.
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