Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films
作者： F. Alibart , O. Durand Drouhin , C. Debiemme-Chouvy , M. Benlahsen
DOI: 10.1016/J.SSC.2007.11.025
关键词: Carbon film 、 Nitride 、 Carbon nitride 、 Sputter deposition 、 Amorphous carbon 、 Absorption spectroscopy 、 Analytical chemistry 、 Band gap 、 Partial pressure 、 Chemistry
摘要: Abstract Amorphous carbon nitride films ( CN x ) were grown by reactive radio-frequency (RF) magnetron sputtering of a high-purity graphite target in argon/nitrogen (Ar/ N 2 gas mixture. The total discharge pressure was 1 Pa and the nitrogen partial (NPP) plasma between 0 0.10%. properties determined using X-ray photoelectron spectroscopy (XPS), infrared absorption, transmission spectroscopy. electrical resistivity studied as function temperature 110 573 K. optical gap varies from 0.30 to 0.7 eV range content good agreement with measurements. two types conduction mechanisms can be interpreted basis on band structure model π electrons disordered presence localized states.
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