作者: M. Haeussler , J. Brandl , E. Schomburg , K.F. Renk , D.G. Pavel'ev
DOI: 10.1109/ICIMW.2002.1076082
关键词: Optoelectronics 、 Stopband 、 Radiation 、 Harmonic 、 Materials science 、 Harmonic oscillator 、 Microwave 、 Gallium arsenide 、 Superlattice 、 Band-stop filter
摘要: We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. made use negative differential conductivity an n-doped GaAs/AlAs superlattice. In this contribution we higher harmonic oscillator for radiation 175 power order μW. The consisted device, mounted in cavity and connected via coaxial line bandstop filter (stopband from 75 to 200 GHz) bias supply. Beside emission GHz, oscillations 35 70 occurred circuit.