作者: Indrek Jõgi , T. Jesper Jacobsson , Mattis Fondell , Timo Wätjen , Jan-Otto Carlsson
DOI: 10.1021/ACS.LANGMUIR.5B03376
关键词: Chemical engineering 、 Crystallite 、 Inorganic chemistry 、 Raman spectroscopy 、 Hematite 、 Substrate (electronics) 、 Deposition (phase transition) 、 Materials science 、 Crystallization 、 Atomic layer deposition 、 Iron oxide
摘要: Nanostructured iron oxides, and especially hematite, are interesting for a wide range of applications ranging from gas sensors to renewable solar hydrogen production. A promising method deposition low-dimensional films is atomic layer (ALD). Although potent technique, ALD ultrathin critically sensitive the substrate temperature conditions where initial formation islands crystallites influences properties films. In this work, at border window forming hybrid ALD/pulsed CVD (pCVD) utilized obtain less substrate. thorough analysis oxide phases on two different substrates, Si(100) SiO2, was performed. Films between 3 50 nm were deposited analyzed with diffraction techniques, high-resolution Raman spectroscopy, optical spectroscopy. Below 10 nominal film thickness, island phase dependent particle crystallization impose constraint...