A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs
作者： Y.Q. Jia , H.J. von Bardeleben
DOI: 10.1016/0375-9601(93)90752-L
关键词: Nuclear magnetic resonance 、 Irradiation 、 Electron 、 Electron paramagnetic resonance 、 Spin (physics) 、 Inorganic compound 、 Physics 、 Signal 、 Electron dose 、 Fluence 、 Molecular physics
摘要: Abstract Electron spin resonance studies of p-type ([Zn] = 7 × 10 17 cm −3 ) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g 1.99. The ratio concentration to electron dose is determined as 3 −1 , the highest among those reported in electron- GaAs. We attribute this intrinsic defects and discuss defect models light recent theoretical results.
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sci-hub.se 参考文章(13)
Giovanni B. Bachelet, G. A. Baraff, M. Schlüter, Self-consistent calculations of the electronic structure for ideal Ga and As vacancies in GaAs Physical Review B. ,vol. 24, pp. 915- 925 ,(1981) , 10.1103/PHYSREVB.24.915
D Pons, J C Bourgoin, Irradiation-induced defects in GaAs Journal of Physics C: Solid State Physics. ,vol. 18, pp. 3839- 3871 ,(1985) , 10.1088/0022-3719/18/20/012
W. O. Siyanbola, D. W. Palmer, Electronic energy levels of defects that anneal in the 280-K stage in irradiated n-type gallium arsenide. Physical Review Letters. ,vol. 66, pp. 56- 59 ,(1991) , 10.1103/PHYSREVLETT.66.56
J Van der Rest, P Pecheurs, Electronic structure of the ideal vacancies in Ge, GaAs and ZnSe crystals Journal of Physics C: Solid State Physics. ,vol. 17, pp. 85- 95 ,(1984) , 10.1088/0022-3719/17/1/015
H. Kamada, K. Ando, Charge state controlled short- and long-range defect motions in GaAs Applied Physics Letters. ,vol. 52, pp. 1973- 1975 ,(1988) , 10.1063/1.99594
E. Christoffel, T. Benchiguer, A. Goltzené, C. Schwab, Wang Guangyu, Wu Ju, EPR evidence for As interstitial-related defects in semi-insulating GaAs. Physical Review B. ,vol. 42, pp. 3461- 3468 ,(1990) , 10.1103/PHYSREVB.42.3461
C. Corbel, M. Stucky, P. Hautojärvi, K. Saarinen, P. Moser, Positron-annihilation spectroscopy of native vacancies in as-grown GaAs. Physical Review B. ,vol. 38, pp. 8192- 8208 ,(1988) , 10.1103/PHYSREVB.38.8192
T. A. Kennedy, M. G. Spencer, Identification of the Ga interstitial in Al x Ga 1-x As by optically detected magnetic resonance. Physical Review Letters. ,vol. 57, pp. 2690- 2693 ,(1986) , 10.1103/PHYSREVLETT.57.2690
Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. Delerue, Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiatedp-type GaAs Physical Review B. ,vol. 45, pp. 1645- 1649 ,(1992) , 10.1103/PHYSREVB.45.1645
C. Delerue, Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs Physical Review B. ,vol. 44, pp. 10525- 10535 ,(1991) , 10.1103/PHYSREVB.44.10525