作者: D. Bischoff , T. Krähenmann , S. Dröscher , M. A. Gruner , C. Barraud
DOI: 10.1063/1.4765345
关键词: Graphene 、 Graphene nanoribbons 、 Substrate (electronics) 、 Materials science 、 Electron mobility 、 Fabrication 、 Silicon dioxide 、 Graphene foam 、 Ion 、 Nanotechnology
摘要: We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices nanoribbons a hexagonal boron nitride substrate. show that have significantly higher mobility lower disorder density compared to fabricated silicon dioxide substrate in agreement with previous findings. The transport characteristics reactive-ion-etched nitride, however, appear be very similar those ribbons perform detailed study order highlight similarities as well differences. Our findings suggest edges an important influence nanodevices.