Process for preparing a semiconductor device with a narrow-channel MOS transistor
作者： Takahiko Urai
DOI:
关键词: Semiconductor device 、 Silicon nitride 、 Masking (art) 、 Etching (microfabrication) 、 Communication channel 、 Optoelectronics 、 Transistor 、 Substrate (electronics) 、 Channel-stopper 、 Materials science 、 Electrical engineering
摘要: A second photo-resist film 6a is formed on first 5a which functions as a mask for etching an oxidation resistant silicon nitride 3 in region narrow-channel MOS transistor to be formed. Ions having p-type are implanted into the surface of substrate 1 using and masking, selectively form ion-implanted layer 7. Then, with heating process, channel stopper 9a field layers 8 formed, whereby element forming regions partitioned by provided. In this manner, it possible, at least that prevented from spreading thereby reduction width prevented.
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