Performance analysis of undoped and Gaussian doped cylindrical surrounding-gate MOSFET with it's small signal modeling
作者： Himangi Sood , Viranjay M. Srivastava , Ghanshyam Singh
DOI: 10.1016/J.MEJO.2016.10.001
关键词: Computational physics 、 Vertical direction 、 Scaling 、 Electronic engineering 、 MOSFET 、 Gaussian 、 Taylor series 、 Materials science 、 Short-channel effect 、 Radius 、 Differential equation
摘要: Abstract The scaling of the solid-state devices are reaching its limit and it enhances significant short channel effects. To overcome these problems, surrounding-gate MOSFET is emerging as a promising structure replacement traditional MOSFETs. In this research work, authors have analyzed performance various parameters for cylindrical using surface potential based approach further transformation variable technique to find solution same differential equation. However, modeling terminal charge trans-capacitance also presented which used circuit simulation. influence Gaussian doping (in vertical direction across radius device) has been surface-potential derived on taylor series expansion.
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sci-hub.se 参考文章(41)
Mustafa Bilal Akbulut, Helena Silva, Ali Gokirmak, Three-Dimensional Computational Analysis of Accumulated Body MOSFETs IEEE Transactions on Nanotechnology. ,vol. 14, pp. 847- 853 ,(2015) , 10.1109/TNANO.2015.2451153
S. M. Sze, Semiconductor Devices: Physics and Technology ,(1985)
Jae Hur, Ji-Min Choi, Jong-Ho Woo, Hyunjae Jang, Yang-Kyu Choi, A Generalized Threshold Voltage Model of Tied and Untied Double-Gate Junctionless FETs for a Symmetric and Asymmetric Structure IEEE Transactions on Electron Devices. ,vol. 62, pp. 2710- 2716 ,(2015) , 10.1109/TED.2015.2436415
Viranjay M. Srivastava, K.S. Yadav, G. Singh, Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch Microelectronics Journal. ,vol. 42, pp. 1124- 1135 ,(2011) , 10.1016/J.MEJO.2011.07.003
D.E. Ward, R.W. Dutton, A charge-oriented model for MOS transistor capacitances IEEE Journal of Solid-state Circuits. ,vol. 13, pp. 703- 708 ,(1978) , 10.1109/JSSC.1978.1051123
Anis Suhaila Mohd Zain, Stanislav Markov, Binjie Cheng, Asen Asenov, Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET Solid-state Electronics. ,vol. 90, pp. 51- 55 ,(2013) , 10.1016/J.SSE.2013.02.052
H.C. Pao, C.T. Sah, Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ Solid-state Electronics. ,vol. 9, pp. 927- 937 ,(1966) , 10.1016/0038-1101(66)90068-2
Kunihiro Suzuki, Yuji Kataoka, Susumu Nagayama, Charles W. Magee, Temel H. Buyuklimanli, Tsutomu Nagayama, Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy IEEE Transactions on Electron Devices. ,vol. 54, pp. 262- 271 ,(2007) , 10.1109/TED.2006.888676
Angsuman Sarkar, Aloke Kumar Das, Swapnadip De, Chandan Kumar Sarkar, Effect of gate engineering in double-gate MOSFETs for analog/RF applications Microelectronics Journal. ,vol. 43, pp. 873- 882 ,(2012) , 10.1016/J.MEJO.2012.06.002
Pujarini Ghosh, Subhasis Haldar, R.S Gupta, Mridula Gupta, An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET Microelectronics Journal. ,vol. 43, pp. 17- 24 ,(2012) , 10.1016/J.MEJO.2011.10.001