Donor binding energies in multivalley semiconductors
作者： M Altarelli , W Y Hsu , R A Sabatini
DOI: 10.1088/0022-3719/10/21/004
关键词: Binding energy 、 Pseudopotential 、 Matrix (mathematics) 、 Condensed matter physics 、 Anisotropy 、 Physics 、 Scattering 、 Impurity 、 Ground state 、 Semiconductor
摘要: The equation for the binding energy of donor impurity states in multi-valley semiconductors, with full inclusion Umklapp contributions to intervalley potential matrix elements and mass anisotropy is solved variationally a point-charge pseudopotential. results are very good agreement experiment Si:P, Ge:As. crucial role scattering ground state discussed.
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sci-hub.se 参考文章(15)
F Bassani, G Iadonisi, B Preziosi, Electronic impurity levels in semiconductors Reports on Progress in Physics. ,vol. 37, pp. 1099- 1210 ,(1974) , 10.1088/0034-4885/37/9/001
Sokrates T. Pantelides, C. T. Sah, Theory of localized states in semiconductors. II. The pseudo impurity theory application to shallow and deep donors in silicon Physical Review B. ,vol. 10, pp. 638- 658 ,(1974) , 10.1103/PHYSREVB.10.638
P K W Vinsome, D Richardson, The dielectric function in zincblende semiconductors Journal of Physics C: Solid State Physics. ,vol. 4, pp. 2650- 2657 ,(1971) , 10.1088/0022-3719/4/16/030
Sokrates T. Pantelides, C. T. Sah, Theory of localized states in semiconductors. I. New results using an old method Physical Review B. ,vol. 10, pp. 621- 637 ,(1974) , 10.1103/PHYSREVB.10.621
James R. Chelikowsky, Marvin L. Cohen, Electronic structure of silicon Physical Review B. ,vol. 10, pp. 5095- 5107 ,(1974) , 10.1103/PHYSREVB.10.5095
H. Fritzsche, Effect of Stress on the Donor Wave Functions in Germanium Physical Review. ,vol. 125, pp. 1560- 1567 ,(1962) , 10.1103/PHYSREV.125.1560
T. H. Ning, C. T. Sah, Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V Impurities Physical Review B. ,vol. 4, pp. 3468- 3481 ,(1971) , 10.1103/PHYSREVB.4.3468
Marvin L. Cohen, T. K. Bergstresser, Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures Physical Review. ,vol. 141, pp. 789- 796 ,(1966) , 10.1103/PHYSREV.141.789
J. Pollmann, Exciton ground-state in strongly anisotropic crystals Solid State Communications. ,vol. 19, pp. 361- 364 ,(1976) , 10.1016/0038-1098(76)91352-1
Koichi Shindo, Hisashi Nara, The Effective Mass Equation for the Multi-Valley Semiconductors Journal of the Physical Society of Japan. ,vol. 40, pp. 1640- 1644 ,(1976) , 10.1143/JPSJ.40.1640