PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells
作者： M. Hofmann , S. Kambor , C. Schmidt , D. Grambole , J. Rentsch
DOI: 10.1155/2008/485467
关键词: Quantum dot solar cell 、 Crystalline silicon 、 Polymer solar cell 、 Electronic engineering 、 Passivation 、 Plasma-enhanced chemical vapor deposition 、 Quantum efficiency 、 Solar cell 、 Forming gas 、 Optoelectronics 、 Materials science
摘要: A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-:H, and a-:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) 30 forming gas anneal) were achieved. Solar precursors without front metallisation showed implied open-circuit voltages values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished cells with up to 20.0% energy conversion efficiency are presented. fit the cell's internal quantum using software tool PC1D a comparison full-area aluminium-back surface field (Al-BSF) thermal shown. PECVD-ONO was found be clearly superior Al-BSF. separation at metallised passivated area equations Fischer Kray. Nuclear reaction analysis (NRA) has been used evaluate hydrogen depth profile passivation different stages.
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