Opportunities and Challenges of Germanium Channel MOSFETs
作者： H. Shang , E. P. Gusev , M. M. Frank , J. O. Chu , S. Bedell
DOI: 10.1007/978-3-540-71491-0_14
关键词: Gate oxide 、 Cmos compatible 、 Germanium 、 Communication channel 、 MOSFET 、 Materials science 、 Atomic layer deposition 、 Gate dielectric 、 Scalability 、 Engineering physics
摘要: This chapter reviews the progress and current critical issues on integration of germanium (Ge) surface channel MOSFET devices as well strained Ge buried structures. The device design scalability MOSFETs are discussed based our recent results. CMOS compatible approaches presented.
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