Photoluminescence spectra of clusters of group IV elements embedded in SiO2 matrices
作者： S. Hayashi , Y. Kanzawa , M. Kataoka , T. Nagareda , K. Yamamoto
DOI: 10.1007/BF01429126
关键词: Naked eye 、 Raman scattering 、 Luminescence 、 Raman spectroscopy 、 Materials science 、 Analytical chemistry 、 Silicon 、 Spectral line 、 Photoluminescence 、 Germanium
摘要: Using a rf co-sputtering technique, SiO2 films containing C, Si and Ge atoms were prepared their Raman photoluminescence spectra measured. obtained are very broad indicating that the group IV elements embedded in form of clusters. The samples C clusters showed strong peak at around 2.1∼2.2eV (visible with naked eye). luminescence peaks 1.6∼1.8eV. Strong was not observed for well grown microcrystals few nanometers diameter.
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