High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
作者： A. Wilk , A.R. Kovsh , S.S. Mikhrin , C. Chaix , I.I. Novikov
DOI: 10.1016/J.JCRYSGRO.2005.01.040
关键词: Photoluminescence 、 Substrate (electronics) 、 Current density 、 Optoelectronics 、 Laser 、 Equivalent series resistance 、 Continuous wave 、 Molecular beam epitaxy 、 Quantum dot 、 Optics 、 Chemistry
摘要: Abstract High-performance (high optical output power, high efficiency), GaAs-based Quantum Dots (QD) 1.3 μ m edge emitting laser (EEL) results are presented. The active region is based on multiple stacks of InAs/GaInAs/GaAs QD. whole structure has been grown in a multiwafer production MBE system (using 5 × 3 ″ substrate holders). Threshold current density 190 A / cm 2 and differential quantum efficiency 70% were obtained at room temperature. These excellent values addition to good I–V characteristics (1.1 V turn voltage series resistance as low 10 - 4 Ω ) led record continuous wave (CW) power 4.2 W for broad area devices ( 100 wide, 1600 long).
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