作者: Ahmet Tombak , Arife Gencer Imer , Ranjdar Hamad Basha Syan , Mehmet Gülcan , Selçuk Gümüş
DOI: 10.1007/S11664-018-6657-Z
关键词: Physical chemistry 、 Transition metal 、 Thin film 、 Electronic structure 、 Substrate (electronics) 、 Density functional theory 、 Heterojunction 、 Ligand 、 Metal
摘要: An azo-azomethine-based ligand (H2L) and its transition-metal complexes were prepared, the electronic structure of synthesized compounds obtained computationally using density functional theory at B3LYP/6-31G (d,p) level. Furthermore, organic–inorganic heterojunctions fabricated by forming thin films H2L Co(II), Ni(II), Pd(II) metal on n-Si substrate. The fundamental electrical parameters rectifying identified based current–voltage data in dark room temperature. photosensing properties devices investigated under illumination various intensities from 40 mW/cm2 to 100 mW/cm2. results showed that photoelectrical characteristics could be modified film complex, with best being for heterojunction compound 1.