A new method to induce molecular low bias negative differential resistance with multi-peaks
作者： Y. Min , C. G. Zhong , Z. C. Dong , Z. Y. Zhao , P. X. Zhou
DOI: 10.1063/1.4941458
关键词: Molecule 、 Nanotechnology 、 Chemical physics 、 Chemistry 、 Organic semiconductor 、 Contact resistance 、 Electrode 、 Low power dissipation 、 Electrical resistivity and conductivity 、 Differential (mathematics) 、 Ab initio quantum chemistry methods
摘要: According to a first-principles study of the transport properties of two thiolated anthracene-9, 10-diono molecules sandwiching ethyl, a new method to induce molecular low bias negative differential resistance with multi-peaks for strong n-or p-type molecules is proposed. The anthracene-9, 10-diono molecule shows strong n-type characteristics when in contact with Au and Ag electrodes via a thiolate. The multiple negative differential resistance effect originated from the molecule–electrode couple is different between Ag and Au electrodes …
harvard.edu
scitation.org
sci-hub.se 
researchgate.net 参考文章(63)
Alexandre R. Rocha, Víctor M. García-suárez, Steve W. Bailey, Colin J. Lambert, Jaime Ferrer, Stefano Sanvito, Towards molecular spintronics. Nature Materials. ,vol. 4, pp. 335- 339 ,(2005) , 10.1038/NMAT1349
Jorge M. Seminario, Angelica G. Zacarias, Pedro A. Derosa, Theoretical Analysis of Complementary Molecular Memory Devices Journal of Physical Chemistry A. ,vol. 105, pp. 791- 795 ,(2001) , 10.1021/JP003283Q
T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, A.C. Seabaugh, F.J. Morris, T.S. Moise, E.A. Beam, G.A. Frazier, A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-state Circuits. ,vol. 33, pp. 1342- 1349 ,(1998) , 10.1109/4.711333
Chun Ning Lau, Duncan R. Stewart, R. Stanley Williams, Marc Bockrath, Direct Observation of Nanoscale Switching Centers in Metal/Molecule/Metal Structures Nano Letters. ,vol. 4, pp. 569- 572 ,(2004) , 10.1021/NL035117A
Sunhae Shin, Kyung Rok Kim, Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications Japanese Journal of Applied Physics. ,vol. 54, ,(2015) , 10.7567/JJAP.54.06FG07
Eldon G. Emberly, George Kirczenow, Current-driven conformational changes, charging, and negative differential resistance in molecular wires Physical Review B. ,vol. 64, pp. 125318- ,(2001) , 10.1103/PHYSREVB.64.125318
R.H. Mathews, J.P. Sage, T.C.L.G. Sollner, S.D. Calawa, Chang-Lee Chen, L.J. Mahoney, P.A. Maki, K.M. Molvar, A new RTD-FET logic family Proceedings of the IEEE. ,vol. 87, pp. 596- 605 ,(1999) , 10.1109/5.752517
Jonas Berg, Stefan Bengtsson, Per Lundgren, Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells Solid-state Electronics. ,vol. 44, pp. 2247- 2252 ,(2000) , 10.1016/S0038-1101(00)00204-5
Kurt Stokbro, First-Principles Modeling of Molecular Single-Electron Transistors† Journal of Physical Chemistry C. ,vol. 114, pp. 20461- 20465 ,(2010) , 10.1021/JP104811R
Per Hedegård, Martin Leijnse, Karsten Flensberg, Mogens Brøndsted Nielsen, Wei Sun, Interaction-induced negative differential resistance in asymmetric molecular junctions arXiv: Mesoscale and Nanoscale Physics. ,(2010) , 10.1063/1.3560474