Copper interconnect barrier layer structure and formation method
作者： Christophe Marcadal , Roderick C. Mosely , Seshadri Ganguli , Ling Chen , Mei Chang
DOI:
关键词: Nucleation 、 Copper interconnect 、 Electronic engineering 、 Tin 、 Materials science 、 Chemical vapor deposition 、 Barrier layer 、 Layer (electronics) 、 Composite material 、 Atomic layer deposition 、 Tantalum nitride
摘要: A method for forming a tungsten-containing copper interconnect barrier layer (e.g., tungsten [W] or tungsten-nitride [WxN] layer) on substrate with high greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The includes first depositing thin titanium-nitride (TiN) tantalum nitride (TaN) nucleation (12) the substrate, followed by formation of (20) W orWxN overlying substrate. can, example, be formed using Chemical Vapor Deposition (CVD) technique that employs fluorine-free gas hexacarbonyl [W(CO)6]) WF6-based Atomic Layer (ALD) technique. presence TiN (or TaN) facilitates tungsten-containing 30% structure [TAN]) disposed directly single dual-damascene substrate). also WxN using, CVD ALD
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