GaAlAs/GaAs Surface-Emitting Injection Laser
作者： A. Ibaraki , K. Iga , S. Ohkouchi , S. Ishikawa
DOI:
关键词: Optoelectronics 、 Diode-pumped solid-state laser 、 Temperature coefficient 、 Fabrication 、 Laser 、 Vertical-cavity surface-emitting laser 、 Absorption (electromagnetic radiation) 、 Gallium arsenide 、 X-ray laser 、 Materials science
摘要: Recently a GaInAsP/InP surface-emitting (SE) injection laser (λ = 1.3 μm) was demonstrated with threshold current of 50 mA at 77 K under pulsed condition, which operated up to 140 K.1 It seems easier use the GaAlAs/GaAs system for room-temperature operation, because it has large characteristic temperature coefficient To near room temperature.2 Moreover, material relatively small absorption loss3 that is preferable small-gain SE laser. We report fabrication and operation temperature.
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