IR Raman spectroscopy with semiconductor devices for excitation and detection
作者： A.Rubens B. De Castro , Paulo R.B. Pedreira
DOI: 10.1016/0030-4018(87)90303-8
关键词: Raman scattering 、 Semiconductor detector 、 Materials science 、 Optics 、 Diode 、 Laser 、 Longitudinal mode 、 Photodiode 、 Raman spectroscopy 、 Orders of magnitude (temperature)
摘要: Abstract We describe a Raman spectrometer with no moving parts based on GaAlAs single longitudinal mode diode laser for excitation and cooled Si array fopr detection. The measured performance was factor of three worse than calculated. calculated can be enhanced by more orders magnitude few practical improvements powerful sources.
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