作者: Xiao Chi , Zhen Huang , Teguh C Asmara , Kun Han , Xinmao Yin
关键词: Materials science 、 Electron mobility 、 Delocalized electron 、 Screening effect 、 Condensed matter physics 、 X-ray absorption spectroscopy 、 Absorption spectroscopy 、 Electron 、 Critical value 、 Semiconductor
摘要: … Using a combination of angle-dependent SE and polarization-dependent XAS at Ti L 3,2 and OK edges, we reveal that the enhancement of mobility is mainly caused by the increased …