Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy
作者： Lorenzo Mancini , Florian Moyon , David Hernàndez-Maldonado , Ivan Blum , Jonathan Houard
DOI: 10.1021/ACS.NANOLETT.7B01189
关键词: Quantum dot 、 Epitaxy 、 Focused ion beam 、 Scanning transmission electron microscopy 、 Electron tomography 、 Field electron emission 、 Materials science 、 Molecular physics 、 Atom probe 、 Analytical chemistry 、 Characterization (materials science)
摘要: The localization of carrier states in GaN/AlN self-assembled quantum dots (QDs) is studied by correlative multimicroscopy relying on microphotoluminescence, electron tomography, and atom probe tomography (APT). Optically active field emission tip specimens were prepared focused ion beam from an epitaxial film containing a stack dot layers analyzed with different techniques applied subsequently the same tip. transition energies single QDs calculated framework 6-bands k.p model basis APT scanning transmission microscopy characterization showing that good agreement between experimental can be obtained, overcoming limitations both techniques. results indicate holes effectively localize at interface fluctuations bottom QD, decreasing extent wave function band-to-band energy. They also represent important step toward correlation three-dimensional...
archives-ouvertes.fr
acs.org
harvard.edu
sci-hub.se 参考文章(57)
Florian Furtmayr, Jörg Teubert, Pascal Becker, Sonia Conesa-Boj, Joan Ramon Morante, Alexey Chernikov, Sören Schäfer, Sangam Chatterjee, Jordi Arbiol, Martin Eickhoff, Carrier confinement in GaN/Al x Ga 1-x N nanowire heterostructures (0<x≤ 1) Physical Review B. ,vol. 84, pp. 205303- ,(2011) , 10.1103/PHYSREVB.84.205303
Aleksey D. Andreev, Eoin P. O’Reilly, Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots Applied Physics Letters. ,vol. 79, pp. 521- 523 ,(2001) , 10.1063/1.1386405
N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, J. Massies, Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells Journal of Applied Physics. ,vol. 86, pp. 3714- 3720 ,(1999) , 10.1063/1.371241
Vladan Mlinar, Alex Zunger, Spectral barcoding of quantum dots: Deciphering structural motifs from the excitonic spectra Physical Review B. ,vol. 80, pp. 035328- ,(2009) , 10.1103/PHYSREVB.80.035328
F. Vurpillot, G. Da Costa, A. Menand, D. Blavette, Structural analyses in three-dimensional atom probe: a Fourier transform approach. Journal of Microscopy. ,vol. 203, pp. 295- 302 ,(2001) , 10.1046/J.1365-2818.2001.00923.X
Daniel Hofstetter, Sven-Silvius Schad, Hong Wu, William J. Schaff, Lester F. Eastman, GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Applied Physics Letters. ,vol. 83, pp. 572- 574 ,(2003) , 10.1063/1.1594265
D. Watson-Parris, M. J. Godfrey, P. Dawson, R. A. Oliver, M. J. Galtrey, M. J. Kappers, C. J. Humphreys, Carrier localization mechanisms in InxGa1?xN/GaN quantum wells Physical Review B. ,vol. 83, pp. 115321- ,(2011) , 10.1103/PHYSREVB.83.115321
H Benallali, T Cremel, K Hoummada, Dominique Mangelinck, R André, S Tatarenko, Kuntheak Kheng, None, Atomic scale investigations on CdxZn1−xSe quantum dots: Correlation between the composition and emission properties Applied Physics Letters. ,vol. 105, pp. 053103- ,(2014) , 10.1063/1.4891635
James R. Riley, Sonal Padalkar, Qiming Li, Ping Lu, Daniel D. Koleske, Jonathan J. Wierer, George T. Wang, Lincoln J. Lauhon, Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array. Nano Letters. ,vol. 13, pp. 4317- 4325 ,(2013) , 10.1021/NL4021045
B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, J. L. Rouvière, Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN Physical Review B. ,vol. 56, ,(1997) , 10.1103/PHYSREVB.56.R7069