Silicon-containing layer deposition with silicon compounds

摘要: Embodiments of the invention generally provide a composition silicon compounds and methods for using to deposit silicon-containing film. The processes employ introducing compound substrate surface depositing portion compound, motif, as ligands are another liberated an in-situ etchant. etchants supports growth selective epitaxy. Silicon include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen R carbon, germanium. also comprising three atoms, fourth atom germanium atoms with at least one halogen, well as, four fifth halogen.