High-k Gate Dielectric Deposition Technologies
作者： J.P. Chang
关键词: Gate oxide 、 Deposition (chemistry) 、 Atomic layer deposition 、 Equivalent oxide thickness 、 Optoelectronics 、 High-κ dielectric 、 Materials science 、 Gate dielectric
摘要: The need to replace silicon dioxide and silicon oxynitride with a thicker dielectric layer with higher permittivity is well addressed throughout this book. The transition to a high-k dielectric …
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