Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy.
作者： Stefano Colonna , Fabio Ronci , Antonio Cricenti , Luca Perfetti , Helmuth Berger
DOI: 10.1103/PHYSREVLETT.94.036405
关键词: Scanning tunneling spectroscopy 、 Scanning tunneling microscope 、 Photoemission spectroscopy 、 Metal–insulator transition 、 Condensed matter physics 、 Spectroscopy 、 Spin polarized scanning tunneling microscopy 、 Mott transition 、 Angle-resolved photoemission spectroscopy 、 Materials science
摘要: In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at surface 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm presence large hysteresis related first order process. The local character technique allows direct visualization symmetry provides on defect-free region sample. It follows that electronic localization is driven purely enhancement charge density wave amplitude which drives bandwidth controlled metal-insulator transition.
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