作者: Dan Shao , Inna Smolianova , Daoping Tang , Lingzhi Zhang
DOI: 10.1039/C6RA26247C
关键词: Carbon 、 Composite number 、 Materials science 、 Chemical engineering 、 Nanocomposite 、 Carbonization 、 Silicon 、 Anode 、 Amorphous solid 、 Graphene
摘要: A novel core–shell structured Si/S-doped-carbon composite with buffering voids (Si/v-SC), was prepared by a facile hydrothermal method using glucose as carbon source and simultaneously chemical polymerization of 3,4-ethylenedioxythiophene (EDOT) in the presence Si@SiO2 nanoparticles, followed carbonization removal SiO2 layer. The results showed that Si nanoparticles were embedded S-doped-carbon buffer space to form structure. Compared Si/carbon (Si/v-C) without S-doping layer, Si/v-SC electrode improved cycling rate performance, exhibiting reversible capacity 664 mA h g−1 over 300 cycles at current 0.4 high 537 even 10 g−1. effects on properties material further investigated. XRD Raman test revealed increased interspace crystal face, amorphous structure thus initial coulombic efficiency.