Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).
作者： A. Barfuss , L. Dudy , M. R. Scholz , H. Roth , P. Höpfner
DOI: 10.1103/PHYSREVLETT.111.157205
关键词: Phase (matter) 、 Condensed matter physics 、 Epitaxy 、 Fabrication 、 Materials science 、 Topological insulator 、 Dopant 、 Spin (physics) 、 Topological order 、 Fermi level
摘要: We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn InSb. The surface state forms presence an unusual band order not based direct spin-orbit coupling, as shown density functional GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how spin-polarized emerges from second bulk valence band. Moreover, we demonstrate precise control Fermi level by dopants.
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