作者: Ramesh Kumar , Amarjeet Kaur
DOI: 10.1016/J.MTCOMM.2017.11.001
关键词: Optoelectronics 、 Irradiation 、 Semiconductor 、 Graphene 、 Oxide 、 Electrical resistivity and conductivity 、 Analytical chemistry 、 Ion beam 、 Electromagnetic shielding 、 Swift heavy ion 、 Materials science
摘要: Abstract A comparative study based on the effect of various novel reduction techniques for fabrication devices electromagnetic interference (EMI) shielding in X-band frequency is reported. Among methods, we have used hydrazine hydrate and thermal annealing, low energy ion beam implantation swift heavy irradiation. The synthesis as well samples confirmed by Raman spectra FT-IR studies. room temperature dc electrical conductivity correlated with extent graphene oxide samples. sample reduced irradiation Ag+8 at 100 MeV has highest value, which leads to higher EMI effectiveness 55.29 dB skin depth 0.0188 cm. It also observed that decreases increase conductivity. This suggests a strong potential these high performance applications.