Effects of oxygen gettering and target mode change in the formation process of reactively RF sputtered WOx thin films
作者： A Yamamoto , Y Abe , M Kawamura , K Sasaki
DOI: 10.1016/S0042-207X(02)00153-7
关键词: Mineralogy 、 Thin film 、 Electrical resistivity and conductivity 、 Oxygen 、 Argon 、 Analytical chemistry 、 Sputtering 、 Substrate (electronics) 、 Total pressure 、 Oxide 、 Chemistry
摘要: A W target was sputtered in a mixture gas of Ar and O 2 , influences the oxygen flow ratio substrate temperature on electrical optical properties crystal structure WO x films were studied. The formation process studied based changes deposition rate, plasma emission spectra total pressure chamber, divided into following three classes. (1) In low region (below 10%), 3 are formed, (2) intermediate (about 20%), (2≤x<3) formed metal mode, (3) high (above 30%), an oxide mode.
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