Magnetoelectric effect in AlN/CoFe bi-layer thin film composites
作者： S. Narendra Babu , Seong-Gi Min , Amin Yourdkhani , Gabriel Caruntu , Leszek Malkinski
DOI: 10.1063/1.3679042
关键词: Wide-bandgap semiconductor 、 Piezoelectricity 、 Ferromagnetism 、 Magnetoelectric effect 、 Thin film 、 Composite material 、 Nitride 、 Piezoresponse force microscopy 、 Sputter deposition 、 Materials science
摘要: The present work is aimed at fabricating bi-layer aluminum nitride (AlN)/cobalt iron (CoFe) magnetoelectric (ME) thin films using reactive rf/dc magnetron sputtering. A systematic study on structural, morphological, piezoelectric, magnetic and properties undertaken. Except for AlN CoFe, no other phases were detected with the layer thicknesses measured 160 130 nm, respectively. rms roughness was around 2.096 nm 1.806 CoFe. film exhibited both good piezoelectricity ferromagnetism, as well ME effect. 52% change observed in piezoelectric signal, field assisted piezoresponse force microscopy, can be ascribed to existence of a stress-mediated coupling between
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