Nanopipes in gallium nitride nanowires and rods.
作者： Benjamin W. Jacobs , Martin A. Crimp , Kaylee McElroy , Virginia M. Ayres
DOI: 10.1021/NL802198H
关键词: Composite material 、 Gallium nitride 、 Transmission electron microscopy 、 Crystallography 、 Burgers vector 、 Rod 、 Cross section (physics) 、 Dislocation 、 Nanowire 、 Materials science 、 Hollow core
摘要: Gallium nitride nanowires and rods synthesized by a catalyst-free vapor-solid growth method were analyzed with cross section high-resolution transmission electron microscopy. The studies revealed hollow core screw dislocations, or nanopipes, in the rods. cores located at near center of rods, along axis dislocation. formation is consistent effect dislocations giant Burgers vector predicted Frank.
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J. D. Eshelby, Screw Dislocations in Thin Rods Journal of Applied Physics. ,vol. 24, pp. 176- 179 ,(1953) , 10.1063/1.1721234
D. Tham, C.-Y. Nam, J. E. Fischer, Defects in GaN Nanowires Advanced Functional Materials. ,vol. 16, pp. 1197- 1202 ,(2006) , 10.1002/ADFM.200500807
D. Cherns, M. E. Hawkridge, Open core threading dislocations in GaN grown by hydride vapour phase epitaxy Philosophical Magazine. ,vol. 86, pp. 4747- 4756 ,(2006) , 10.1080/14786430600690481
Silvija Gradečak, Fang Qian, Yat Li, Hong-Gyu Park, Charles M. Lieber, GaN nanowire lasers with low lasing thresholds Applied Physics Letters. ,vol. 87, pp. 173111- ,(2005) , 10.1063/1.2115087
Aya Moustafa Sayed ElAhl, Maoqi He, Peizhen Zhou, G. L. Harris, Lourdes Salamanca-Riba, Frederick Felt, Harry C. Shaw, Ashok Sharma, Muzar Jah, Darryl Lakins, Todd Steiner, S. Noor Mohammad, Systematic study of effects of growth conditions on the (nano-, meso-, micro)size and (one-, two-, three-dimensional) shape of GaN single crystals grown by a direct reaction of Ga with ammonia Journal of Applied Physics. ,vol. 94, pp. 7749- 7756 ,(2003) , 10.1063/1.1622992
Maoqi He, Peizhen Zhou, S.Noor Mohammad, Gary L. Harris, Joshua B. Halpern, Randy Jacobs, Wendy L. Sarney, Lourdes Salamanca-Riba, Growth of GaN nanowires by direct reaction of Ga with NH3 Journal of Crystal Growth. ,vol. 231, pp. 357- 365 ,(2001) , 10.1016/S0022-0248(01)01466-X
J.D. Eshelby, A.N. Stroh, CXL. Dislocations in thin plates Philosophical Magazine Series 1. ,vol. 42, pp. 1401- 1405 ,(1951) , 10.1080/14786445108560958
V. Potin, P. Vermaut, P. Ruterana, G. Nouet, Extended defects in wurtzite nitride semiconductors Journal of Electronic Materials. ,vol. 27, pp. 266- 275 ,(1998) , 10.1007/S11664-998-0398-3
W. J. Tunstall, P. B. Hirsch, J. Steeds, Effects of surface stress relaxation on the electron microscope images of dislocations normal to thin metal foils Philosophical Magazine. ,vol. 9, pp. 99- 119 ,(1964) , 10.1080/14786436408217476
F. C. Frank, Spontaneous breaking of chiral symmetry in the growth of crystal whiskers: An origin for giant screw dislocations Philosophical Magazine. ,vol. 56, pp. 263- 268 ,(1987) , 10.1080/01418618708205165