Morphology of epitaxial TiN(001) grown by magnetron sputtering
作者： Brian W. Karr , I. Petrov , David G. Cahill , J. E. Greene
DOI: 10.1063/1.118675
关键词: Metallurgy 、 Microstructure 、 Transmission electron microscopy 、 Sputter deposition 、 Thin film 、 Scanning tunneling microscope 、 Sputtering 、 Tin 、 Single crystal 、 Analytical chemistry 、 Materials science
摘要: The evolution of surface morphology and microstructure during growth single crystal TiN(001) is characterized by in situ scanning tunneling microscopy postdeposition plan-view transmission electron microscopy. TiN layers are grown on MgO at 650
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K. Aigner, W. Lengauer, D. Rafaja, P. Ettmayer, Lattice parameters and thermal expansion of Ti(CxN1−x), Zr(CxN1−x), Hf(CxN1−x) and TiN1−x from 298 to 1473 K as investigated by high-temperature X-ray diffraction Journal of Alloys and Compounds. ,vol. 215, pp. 121- 126 ,(1994) , 10.1016/0925-8388(94)90828-1
Y.‐W. Kim, I. Petrov, H. Ito, J. E. Greene, Low‐energy (5<Ei<100 eV), high‐brightness, ultrahigh vacuum ion source for primary ion beam deposition: Applications for Al and Ge Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 13, pp. 2836- 2842 ,(1995) , 10.1116/1.579714
Joseph E. Van Nostrand, S. Jay Chey, M. -A. Hasan, David G. Cahill, J. E. Greene, Surface morphology during multilayer epitaxial growth of Ge(001). Physical Review Letters. ,vol. 74, pp. 1127- 1130 ,(1995) , 10.1103/PHYSREVLETT.74.1127
R. Q. Hwang, J. Schröder, C. Günther, R. J. Behm, Fractal growth of two-dimensional islands: Au on Ru(0001). Physical Review Letters. ,vol. 67, pp. 3279- 3282 ,(1991) , 10.1103/PHYSREVLETT.67.3279
L. Hultman, S.A. Barnett, J.-E. Sundgren, J.E. Greene, Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition Journal of Crystal Growth. ,vol. 92, pp. 639- 656 ,(1988) , 10.1016/0022-0248(88)90048-6
M. D. Johnson, C. Orme, A. W. Hunt, D. Graff, J. Sudijono, L. M. Sander, B. G. Orr, Stable and unstable growth in molecular beam epitaxy Physical Review Letters. ,vol. 72, pp. 116- 119 ,(1994) , 10.1103/PHYSREVLETT.72.116
Michael Bott, Thomas Michely, George Comsa, The homoepitaxial growth of Pt on Pt(111) studied with STM Surface Science. ,vol. 272, pp. 161- 166 ,(1992) , 10.1016/0039-6028(92)91433-C
F. Tsui, J. Wellman, C. Uher, Roy Clarke, Morphology Transition and Layer-by-Layer Growth of Rh(111) Physical Review Letters. ,vol. 76, pp. 3164- 3167 ,(1996) , 10.1103/PHYSREVLETT.76.3164
H.-J. Ernst, F. Fabre, R. Folkerts, J. Lapujoulade, Observation of a growth instability during low temperature molecular beam epitaxy. Physical Review Letters. ,vol. 72, pp. 112- 115 ,(1994) , 10.1103/PHYSREVLETT.72.112
J. Villain, Continuum models of crystal growth from atomic beams with and without desorption Journal De Physique I. ,vol. 1, pp. 19- 42 ,(1991) , 10.1051/JP1:1991114