Semiconductor laser device and method of fabricating the same

摘要: A semiconductor laser device including at least one of a active layer formed super lattice and an optical guide another is disclosed in which part the lattices converted into mixed crystal by impurity induced disordering based upon diffusion ion implantation, to divide first region second having structure, width directions perpendicular lengthwise direction cavity varies along above direction, excitation smaller than mean value region, generate oscillation single transverse mode multi longitudinal mode. Thus, emits beam small astigmatism low feedback noise.